FGH30N6S2D Datasheet, PDF (6/12 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Typical Performance Curves (Continued)
24
DUTY CYCLE < 0.5%,
PULSE DURATION = 250µs
20
16
125^oC
25^oC
12
8
4
0
0
0.5
1.0
1.5
2.0
2.5
3.0
V_EC, FORWARD VOLTAGE (V)
Figure 19. Diode Forward Current vs Forward
Voltage Drop
200
dI_EC/dt = 200A/µs, V_CE = 390V
175
125^oC t_rr
150
125
125^oC t_b
100
25^oC t_rr
75
25^oC t_b
50
125^oC t_a
25
25^oC t_a
0
2
4
6
8
10
12
I_EC, FORWARD CURRENT (A)
Figure 20. Recovery Times vs Forward Current
175
150
125^oC t_b
125
I_EC = 12A, V_CE = 390V
100
75
25^oC t_b
50
125^oC t_a
25
25^oC t_a
0
200 300 400 500 600 700 800 900 1000
dI_EC/dt, RATE OF CHANGE OF CURRENT (A/ms)
Figure 21. Recovery Times vs Rate of Change of
Current
300
V_CE = 390V
250
125^oC, I_EC = 12A
200
150
125^oC, I_EC = 6A
25^oC, I_EC = 12A
100
25^oC, I_EC = 6A
50
0
200 300 400 500 600 700 800 900 1000
dI_EC/dt, RATE OF CHANGE OF CURRENT (A/µs)
Figure 22. Stored Charge vs Rate of Change of
Current
7.0
V_CE = 390V, T_J = 125°C
6.5
6.0
I_EC = 12A
5.5
5.0
4.5
4.0 ^IEC ^{= 6A}
3.5
3.0
200 300 400 500 600 700 800 900 1000
dI_EC/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 23. Reverse Recovery Softness Factor vs
Rate of Change of Current
10
V_CE = 390V, T_J = 125°C
9
I_EC = 12A
8
I_EC = 6A
7
6
5
4
3
200 300 400 500 600 700 800 900 1000
dI_EC/dt, CURRENT RATE OF CHANGE (A/µs)
Figure 24. Maximum Reverse Recovery Current vs
Rate of Change of Current
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A