FGH30N6S2D Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Typical Performance Curves
50
40
30
20
10
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 1. DC Collector Current vs Case
Temperature
70
T_J = 150^oC, R_G = 10Ω, V_GE = 15V, L = 100mH
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 2. Minimum Switching Safe Operating Area
1000
T_C
75^oC
V_GE = 10V
V_GE = 15V
100 ^{fMAX1 = 0.05 / (td(OFF)I + td(ON)I)}
f_MAX2 = (P_D - P_C) / (E_ON2 + E_OFF)
P_C = CONDUCTION DISSIPATION
(DUTY FACTOR = 50%)
R_ØJC = 0.49^oC/W, SEE NOTES
T_J = 125^oC, R_G = 3Ω, L = 200mH, V_CE = 390V
10
1
10
20 30
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 3. Operating Frequency vs Collector to
Emitter Current
12
350
V_CE = 390V, R_G = 10Ω, T_J = 125^oC
10
300
8
250
t_SC
I_SC
6
200
4
150
2
100
9
10 11 12 13 14 15 16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 4. Short Circuit Withstand Time
18
DUTY CYCLE < 0.5%, V_GE = 10V
16 _{PULSE DURATION = 250ms}
14
12
10
8
6
T_J = 150^oC
T_J = 125^oC
4
2
T_J = 25^oC
0
0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 5. Collector to Emitter On-State Voltage
18
16
DUTY CYCLE < 0.5%, V_GE =15V
PULSE DURATION = 250ms
14
12
10
8
6
T_J = 150^oC
T_J = 125^oC
4
2
T_J = 25^oC
0
.5
.75
1
1.25 1.50 1.75
2.0
2.25
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 6. Collector to Emitter On-State Voltage
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A