FGH30N6S2D Datasheet, PDF (5/12 Pages) Fairchild Semiconductor – 600V, SMPS II Series N-Channel IGBT with Anti-Parallel StealthTM Diode

Typical Performance Curves (Continued)
175
DUTY CYCLE < 0.5%, V_CE = 10V
150 ^{PULSE DURATION = 250µs}
125
T_J = 25^oC
100
75
50
25 ^TJ ^{= 125oC}
T_J = -55^oC
0
5 6 7 8 9 10 11 12 13 14 15 16
V_GE , GATE TO EMITTER VOLTAGE (V)
Figure 13. Transfer Characteristic
16
I_G(REF) = 1mA, R_L = 25Ω, T_J = 25^oC
14
12
V_CE = 600V
10
8
6
V_CE = 400V
4
V_CE = 200V
2
0 _{0 2 4 6 8 10 12 14 16 18 20 22 24}
Q_G, GATE CHARGE (nC)
Figure 14. Gate Charge
1.2
R_G = 10Ω, L = 500mH, V_CE = 390V, V_GE = 15V
1.0
E_TOTAL = E_ON2 + E_OFF
0.8
I_CE = 24A
0.6
0.4
I_CE = 12A
0.2
I_CE = 6A
0
25
50
75
100
125
150
T_C, CASE TEMPERATURE (^oC)
Figure 15. Total Switching Loss vs Case
Temperature
10
T_J = 125^oC, L = 500µH, V_CE = 390V, V_GE = 15V
E_TOTAL = E_ON2 + E_OFF
I_CE = 24A
1
I_CE = 12A
I_CE = 6A
0.1
1.0
10
100
1000
R_G, GATE RESISTANCE (Ω)
Figure 16. Total Switching Loss vs Gate
Resistance
1.4
FREQUENCY = 1MHz
1.2
1.0
0.8
C_IES
0.6
0.4
C_OES
0.2
0.0
0
C_RES
10 20 30 40 50 60 70 80
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
90 100
Figure 17. Capacitance vs Collector to Emitter
Voltage
3.5
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs, T_J = 25^oC
3.0
2.5
I_CE = 24A
I_CE = 12A
2.0
I_CE = 6A
1.5
6 7 8 9 10 11 12 13 14 15 16
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 18. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
©2001 Fairchild Semiconductor Corporation
FGH30N6S2D / FGP30N6S2D / FGB30NS2D Rev. A