FDS5672 Datasheet, PDF (6/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Typical Characteristics T_C = 25°C unless otherwise noted
1.2
V_GS = V_DS, I_D = 250µA
1.1
1.0
0.9
0.8
0.7
0.6
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.10
I_D = 250µA
1.05
1.00
0.95
0.90
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
6000
C_ISS = C_GS + C_GD
1000
C_OSS ≅ C_DS + C_GD
C_RSS = C_GD
10
V_DD = 50V
8
6
4
100
V_GS = 0V, f = 1MHz
40
0.1
1
10
60
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
I_D = 12A
I_D = 1A
5
10
15
20
25
30
35
Q_g, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2005 Fairchild Semiconductor Corporation
6
FDS5672 Rev. A
www.fairchildsemi.com