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FDS5672 Datasheet, PDF (4/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET
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Typical Characteristics TC = 25°C unless otherwise noted
1.2
15
1.0
12
VGS = 10V
0.8
9
0.6
6
0.4
3
0.2
0
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
Figure 1. Normalized Power Dissipation vs
Ambient Temperature
0
25
50
75
100
125
150
TA, AMBIENT TEMPERATURE (oC)
Figure 2. Maximum Continuous Drain Current vs
Ambient Temperature
2
1
DUTY CYCLE - DESCENDING ORDER
0.5
0.2
0.1
0.05
0.02
0.1
0.01
0.01
0.001
10-5
SINGLE PULSE
PDM
t1
t2
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x ZθJA x RθJA + TA
10-4
10-3
10-2
10-1
100
101
102
103
t, RECTANGULAR PULSE DURATION (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
1100
VGS = 10V
100
TRANSCONDUCTANCE
MAY LIMIT CURRENT
IN THIS REGION
TA = 25oC
FOR TEMPERATURES
ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
I = I25
150 - TA
125
10
10-5
10-4
10-3
10-2
10-1
100
101
102
103
t, PULSE WIDTH (s)
Figure 4. Peak Current Capability
©2005 Fairchild Semiconductor Corporation
4
FDS5672 Rev. A
www.fairchildsemi.com
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