FDS5672 Datasheet, PDF (3/12 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET

Resistive Switching Characteristics (V_GS = 10V)
t_ON
Turn-On Time
t_d(ON)
Turn-On Delay Time
t_r
t_d(OFF)
Rise Time
Turn-Off Delay Time
V_DD = 30V, I_D = 12A
V_GS = 10V, R_GS = 9.1Ω
t_f
Fall Time
t_OFF
Turn-Off Time
-
-
50
ns
-
13
-
ns
-
20
-
ns
-
35
-
ns
-
14
-
ns
-
-
64
ns
Drain-Source Diode Characteristics
V_SD
Source to Drain Diode Voltage
t_rr
Reverse Recovery Time
Q_RR
Reverse Recovered Charge
I_SD = 12A
-
I_SD = 6A
-
I_SD=12A, dI_SD/dt = 100A/µs
-
I_SD=12A, dI_SD/dt = 100A/µs
-
-
1.25
V
-
1.0
V
-
39
ns
-
40
nC
Notes:
1: Starting T_J = 25°C, L = 1mH, I_AS = 22A, V_DD = 60V, V_GS = 10V.
2: R_θJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the
3:
drain
R_θJA
ipsinmse. aRsu^θJre^Cdiswgituha1ra.0ntiene^{2dcobpypdeersoignnFwRh-4ilebRoaθJ}rd^A.
is
determined
by
the
user’s
board
design.
©2005 Fairchild Semiconductor Corporation
3
FDS5672 Rev. A
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