FAN3121_13 Datasheet, PDF (6/21 Pages) Fairchild Semiconductor – Single 9-A High-Speed, Low-Side Gate Driver

Electrical Characteristics
Unless otherwise noted, V_DD=12 V and T_J=-40°C to +125°C. Currents are defined as positive into the device and
negative out of the device.
Symbol
Parameter
Conditions
Supply
V_DD Operating Range
TTL
I_DD
Supply Current, Inputs / EN Not Connected _CMOS(9)
V_ON Turn-On Voltage
V_OFF Turn-Off Voltage
FAN3121TMX_F085, FAN3122TMX_F085 (Automotive-Qualified Versions)
V_OFF Turn-Off Voltage⁽¹³⁾
Inputs (TTL, FAN312xT)⁽¹⁰⁾
V_{IL_T} INx Logic Low Threshold
V_{IH_T} INx Logic High Threshold
V_{HYS_T} TTL Logic Hysteresis Voltage
FAN3121TMX, FAN3122TMX
I_IN+ Non-Inverting Input Current
IN from 0 to V_DD
I_IN-
Inverting Input Current
IN from 0 to V_DD
FAN3121TMX_F085, FAN3122TMX_F085 (Automotive-Qualified Versions)
I_{INx_T} Non-inverting Input Current⁽¹³⁾
I_{INx_T} Non-inverting Input Current⁽¹³⁾
I_{INx_T} Inverting Input Current⁽¹³⁾
I_{INx_T} Inverting Input Current⁽¹³⁾
Inputs (CMOS, FAN312xC)⁽¹⁰⁾
IN=0 V
IN=V_DD
IN=0 V
IN=V_DD
V_{IL_C} INx Logic Low Threshold
V_{IH_C} INx Logic High Threshold
V_{HYS_C} CMOS Logic Hysteresis Voltage
FAN3121CMX, FAN3122CMX
I_IN+ Non-Inverting Input Current
IN from 0 to V_DD
I_IN-
Inverting Input Current
IN from 0 to V_DD
FAN3121CMX_F085, FAN3122CMX_F085 (Automotive-Qualified Versions)
I_{INx_C}
I_{INx_C}
I_{INx_C}
I_{INx_C}
Non-Inverting Input Current⁽¹³⁾
Non-Inverting Input Current⁽¹³⁾
Inverting Input Current⁽¹³⁾
Inverting Input Current⁽¹³⁾
IN=0 V
IN=V_DD
IN=0 V
IN=V_DD
ENABLE (FAN3121, FAN3122)
V_ENL
V_ENH
V_{HYS_T}
R_PU
t_D1, t_D2
t_D1, t_D2
Enable Logic Low Threshold
Enable Logic High Threshold
TTL Logic Hysteresis Voltage
Enable Pull-up Resistance
Propagation Delay, CMOS EN ⁽¹¹⁾
Propagation Delay, TTL EN⁽¹¹⁾
EN from 5 V to 0 V
EN from 0 V to 5 V
© 2008 Fairchild Semiconductor Corporation
FAN3121 / FAN3122 • Rev. 1.0.2
6
Min. Typ. Max. Unit
4.5
18.0 V
0.65 0.90
mA
0.58 0.85
3.5 4.0 4.3 V
3.30 3.75 4.10 V
3.25 3.75 4.15 V
0.8 1.0
V
1.7 2.0 V
0.40 0.70 0.85 V
-1
-175
175 µA
1
µA
-1.5
1.5 µA
90 120 175.0 µA
-175 -120 -90 µA
-1.5
1.5 µA
30 38
55
12 17
%V_DD
70 %V_DD
24 %V_DD
-1
-175
175 µA
1
µA
-1.5
1.5 µA
90 120 175 µA
-175 -120 -90 µA
-1.5
1.5 µA
1.2 1.6 2.0 V
1.8 2.2 2.6 V
0.2 0.6 0.8 V
68 100 134 kΩ
8
17
27
ns
14 21
33
ns
Continued on the following page…
www.fairchildsemi.com