SGP15N60RUF Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

Common Emitter
V
GE
=
±
15V,
R
G
=
13Ω
T = 25℃ ━━
C
T_C = 125℃ ------
1000
Eoff
Eoff
Eon
100
5
10
15
20
25
30
Collector Current, I_C [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
20Ω
T = 25℃
C
12
V = 100 V
CC
9
300 V
200 V
6
3
0
0
10
20
30
40
50
Gate Charge, Q_g [ nC ]
Fig 14. Gate Charge Characteristics
100
I_C MAX. (Pulsed)
I MAX. (Continuous)
C
10
DC Operation
50us
100us
1㎳
1 _{Single Nonrepetitive}
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.1
0.1
1
10
100
Collector-Emitter Voltage, V [V]
CE
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
V_GE = 20V, T_C = 100℃
1
1
10
100
1000
Collector-Emitter Voltage, V_CE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
single pulse
1E-3
10^-5
10^-4
10^-3
10^-2
10^-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
10⁰
10¹
©2000 Fairchild Semiconductor International
Fig 17. Transient Thermal Impedance of IGBT
SGP15N60RUF Rev. A