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SGP15N60RUF Datasheet, PDF (2/6 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT
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Electrical Characteristics of IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter
Saturation Voltage
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
Le
Internal Emitter Inductance
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
IC = 15mA, VCE = VGE
IC = 15A, VGE = 15V
IC = 24A, VGE = 15V
VCE = 30V, VGE = 0V,
f = 1MHz
VCC = 300 V, IC = 15A,
RG = 13Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 15A,
RG = 13Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 15A,
VGE = 15V
Measured 5mm from PKG
Min. Typ. Max. Units
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.0
8.5
V
--
2.2 2.8
V
--
2.5
--
V
--
948
--
pF
--
101
--
pF
--
33
--
pF
--
17
--
ns
--
33
--
ns
--
44
65
ns
--
118 200
ns
--
320
--
uJ
--
356
--
uJ
--
676 950
uJ
--
20
--
ns
--
34
--
ns
--
48
70
ns
--
212 350
ns
--
340
--
uJ
--
695
--
uJ
-- 1035 1450 uJ
10
--
--
us
--
42
60
nC
--
7
10
nC
--
17
24
nC
--
7.5
--
nH
©2000 Fairchild Semiconductor International
SGP15N60RUF Rev. A
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