SGP15N60RUF Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – Short Circuit Rated IGBT

1800
1500
1200
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T = 25℃
C
900
Coes
600
Cres
300
0
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I_C = 15A
T_C = 25℃ ━━
T = 125℃ ------
C
Toff
Toff
Tf
Tf
100
1
10
100
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
Common Emitter
V_GE = ± 15V, R_G = 13Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
100
Tr
10
5
10
15
20
25
30
Collector Current, I_C [A]
Fig 11. Turn-On Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor International
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 15A
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
100
Tr
10
1
10
100
Gate Resistance, R_G [Ω]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 15A
C
T = 25℃ ━━
C
T_C = 125℃ ------
Eoff
Eon
Eoff
100
1
10
100
Gate Resistance, R_G [Ω ]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V
GE
=
±
15V,
R
G
=
13Ω
T = 25℃ ━━
C
T = 125℃ ------
C
Toff
Tf
Toff
100
Tf
5
10
15
20
25
30
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP15N60RUF Rev. A