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FQPF6N90CT Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3 Ω
Typical Characteristics (Continued)
100
D = 0.5
0 .2
1 0 -1
0 .1
0 .0 5
1 0 -2
0 .0 2
0 .0 1
sin g le p u lse
※ N otes :
1. Z θ JC(t) = 0.75 ℃ /W M ax.
2. D uty Factor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W a ve P ulse D u ra tio n [se c]
Figure 11-1. Transient Thermal Response Curve for FQP6N90C
100
D = 0.5
0 .2
0 .1
1 0 -1
0 .0 5
0 .0 2
0 .0 1
1 0 -2
sin g le p u lse
※ N otes :
1. Z θ JC(t) = 2.3 ℃ /W M ax.
2. D uty F actor, D =t1/t2
3 . T JM - T C = P DM * Z θ JC(t)
PDM
t1
t2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S qu a re W a ve P ulse D u ra tio n [se c]
Figure 11-2. Transient Thermal Response Curve for FQPF6N90C
©2006 Fairchild Semiconductor Corporation
5
FQP6N90C / FQPF6N90C Rev. C1
www.fairchildsemi.com