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FQPF6N90CT Datasheet, PDF (2/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3 Ω
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Package Marking and Ordering Information
Part Number
FQP6N90C
FQPF6N90C
Top Mark
FQP6N90C
FQPF6N90C
Package
TO-220
TO-220F
Packing Method
Tube
Tube
Reel Size
N/A
N/A
Tape Width
N/A
N/A
Quantity
50 units
50 units
Electrical Characteristics
Symbol
Parameter
TC = 25°C unless otherwise noted
Test Conditions
Min. Typ. Max. Unit
Off Characteristics
BVDSS Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
900 --
∆BVDSS Breakdown Voltage Temperature
/ ∆TJ
Coefficient
ID = 250 µA, Referenced to 25°C -- 1.07
IDSS
Zero Gate Voltage Drain Current
VDS = 900 V, VGS = 0 V
VDS = 720 V, TC = 125°C
--
--
--
--
IGSSF
Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V
--
--
IGSSR
Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V
--
--
--
--
10
100
100
-100
V
V/°C
µA
µA
nA
nA
On Characteristics
VGS(th) Gate Threshold Voltage
RDS(on)
Static Drain-Source
On-Resistance
gFS
Forward Transconductance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 3 A
VDS = 50 V, ID = 3 A
3.0 --
5.0
V
-- 1.93 2.3
Ω
-- 5.5
--
S
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
-- 1360 1770 pF
-- 110 145
pF
--
11
15
pF
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 450 V, ID = 6 A,
RG = 25 Ω
--
35
80
ns
--
90 190
ns
--
55 120
ns
(Note 4)
--
60 130
ns
VDS = 720 V, ID = 6 A,
--
30
40
nC
VGS = 10 V
-- 9.0
--
nC
(Note 4) --
12
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
ISM
Maximum Pulsed Drain-Source Diode Forward Current
VSD
Drain-Source Diode Forward Voltage VGS = 0 V, IS = 6 A
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 6 A,
dIF / dt = 100 A/µs
Notes:
1. Repetitive rating : pulse-width limited by maximum junction temperature.
2. L = 34 mH, IAS = 6 A, VDD = 50 V, RG = 25 Ω, starting TJ = 25°C.
3. I SD ≤ 6 A, di/dt ≤ 200 A/µs , VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature.
--
--
6.0
A
--
--
24
A
--
--
1.4
V
-- 630
--
ns
-- 6.9
--
µC
©2006 Fairchild Semiconductor Corporation
2
FQP6N90C / FQPF6N90C Rev. C1
www.fairchildsemi.com
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