FQPF6N90CT Datasheet, PDF (1/10 Pages) Fairchild Semiconductor – N-Channel QFET® MOSFET 900 V, 6.0 A, 2.3 Ω

FQP6N90C / FQPF6N90C
N-Channel QFET^® MOSFET
900 V, 6.0 A, 2.3 Ω
December 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
Features
• ^{6.0 A, 900 V, R}DS(on) ^{= 2.3 Ω (Max.) @ V}GS ^{= 10 V,}
I_D = 3.0 A
• Low Gate Charge (Typ. 30 nC)
• Low Crss (Typ. 11 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G
S
Absolute Maximum Ratings T_C = 25°C unless otherwise noted.
Symbol
Parameter
V_DSS
Drain-Source Voltage
I_D
Drain Current - Continuous (T_C = 25°C)
- Continuous (T_C = 100°C)
I_DM
Drain Current - Pulsed
V_GSS
Gate-Source Voltage
E_AS
Single Pulsed Avalanche Energy
I_AR
Avalanche Current
E_AR
Repetitive Avalanche Energy
dv/dt
Peak Diode Recovery dv/dt
P_D
Power Dissipation (T_C = 25°C)
- Derate above 25°C
T_J, T_STG
Operating and Storage Temperature Range
T_L
Maximum lead temperature for soldering,
1/8" from case for 5 seconds
* Drain current limited by maximum junction temperature.
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
FQP6N90C FQPF6N90C
900
6
6*
3.8
3.8 *
24
24 *
± 30
650
6
16.7
4.5
167
56
1.43
0.48
-55 to +150
300
Thermal Characteristics
Symbol
R_θJC
R_θCS
R_θJA
Parameter
Thermal Resistance, Junction-to-Case, Max.
Thermal Resistance, Case-to-Sink Typ, Max.
Thermal Resistance, Junction-to-Ambient, Max.
FQP6N90C
0.75
0.5
62.5
FQPF6N90C
2.25
--
62.5
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W/°C
°C
°C
Unit
°C/W
°C/W
°C/W
©2006 Fairchild Semiconductor Corporation
1
FQP6N90C / FQPF6N90C Rev. C1
www.fairchildsemi.com