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FQP10N20C Datasheet, PDF (5/10 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET
Typical Characteristics (Continued)
10 0 D = 0 .5
1 0 -1
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
※ N o te s :
1 . Z θ J C( t ) = 1 . 7 4 ℃ / W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t , S q u a re W a v e P u ls e D u ra tio n [s e c ]
1
Figure 11-1. Transient Thermal Response Curve for FQP10N20C
D = 0.5
100
0 .2
1 0 -1
0 .1
0 .0 5
0 .0 2
0 .0 1
※ N o te s :
1 . Z θ J C( t ) = 3 . 3 3 ℃ / W M a x .
2 . D u ty F a c to r, D = t1/t2
3 . T J M - T C = P D M * Z θ J C( t )
sin g le p u lse
1 0 -2
1 0 -5
1 0 -4
1 0 -3
1 0 -2
1 0 -1
100
101
t1, S q u a re W a v e P u ls e D u ra tio n [s e c ]
Figure 11-2. Transient Thermal Response Curve for FQPF10N20C
©2003 Fairchild Semiconductor Corporation
Rev. A, March 2003