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| FQP10N20C Datasheet, PDF (3/10 Pages) Fairchild Semiconductor – 200V N-Channel MOSFET | |||
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Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
100
10-1
10-1
â» Notes :
1. 250μ s Pulse Test
2. TC = 25â
100
101
V , Drain-Source Voltage [V]
DS
Figure 1. On-Region Characteristics
1.5
1.0
VGS = 10V
VGS = 20V
0.5
â» Note : TJ = 25â
0.0
0
5
10
15
20
25
30
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs
Drain Current and Gate Voltage
1200
1000
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
800
Ciss
Coss
600
400
Crss
200 â» Note ;
1. VGS = 0 V
2. f = 1 MHz
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2003 Fairchild Semiconductor Corporation
101
150oC
25oC
100
-55oC
10-1
2
â» Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150â
25â
â» Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation with Source Current
and Temperature
12
VDS = 40V
10
V = 100V
DS
V = 160V
8
DS
6
4
2
â» Note : ID = 9.5A
0
0
4
8
12
16
20
24
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
Rev. A, March 2003
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