FMC6G30US60 Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – Compact & Complex Module

3500
3000
2500
Cies
Common Emitter
V = 0V, f = 1MHz
GE
T_C = 25℃
2000
1500
Coes
1000
500
Cres
0
1
10
Collector - Emitter Voltage, V_CE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I_C = 30A
T_C = 25℃ ━━
T_C = 125℃ ------
Toff
Toff
Tf
100
1
Tf
10
100
Gate Resistance, R_G [Ω ]
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
1000
Common Emitter
V_GE = ± 15V, R_G = 7Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Ton
Tr
100
10
15
30
45
60
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2000 Fairchild Semiconductor International
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 30A
C
T = 25℃ ━━
C
Ton
T_C = 125℃ ------
Tr
100
10
1
10
100
Gate Resistance, R_G [Ω ]
Fig 8. Turn-On Characteristics vs.
Gate Resistance
10000
Common Emitter
V_CC = 300V, V_GE = ± 15V
I = 30A
C
T_C = 25℃ ━━
T_C = 125℃ ------
Eon
Eoff
1000
Eoff
100
1
10
100
Gate Resistance, R_G [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V_GE = ± 15V, R_G = 7Ω
T_C = 25℃ ━━
T_C = 125℃ ------
Toff
Tf
Toff
100 _Tf
15
30
45
60
Collector Current, I_C [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
FMC6G30US60 Rev. A