FMC6G30US60 Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – Compact & Complex Module

Electrical Characteristics of DIODE @ Inverter T_C = 25°C unless otherwise noted
Symbol
Parameter
V_FM
Diode Forward Voltage
t_rr
Diode Reverse Recovery Time
I_rr
Diode Peak Reverse Recovery
Current
Q_rr
Diode Reverse Recovery Charge
Test Conditions
I_F = 30A
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
I_F = 30A
di / dt = 60 A/us
T_C = 25°C
T_C = 100°C
T_C = 25°C
T_C = 100°C
Min.
--
--
--
--
--
--
--
--
Typ.
2.0
2.0
90
130
2.2
3.4
400
880
Max.
2.8
--
180
--
3.4
--
600
--
Units
V
ns
A
nC
Electrical Characteristics of DIODE @ Converter T_C = 25°C unless otherwise noted
Symbol
Parameter
V_FM
Diode Forward Voltage
I_RRM
Repetitive Reverse Current
Test Conditions
I_F = 30A
T_C = 25°C
T_C = 100°C
V_R = V_RRM
T_C = 25°C
T_C = 100°C
Min.
--
--
--
--
Typ.
1.1
1.0
--
5
Max.
1.5
--
8
--
Units
V
mA
Thermal Characteristics
Inverter
Brake
Converter
Weight
Symbol
R_θJC
R_θJC
R_θJC
R_θJC
R_θJC
Parameter
Junction-to-Case (IGBT Part, per 1/6 Module)
Junction-to-Case (DIODE Part, per 1/6 Module)
Junction-to-Case (IGBT Part)
Junction-to-Case (DIODE Part)
Junction-to-Case (DIODE Part, per 1/6 Module)
Weight of Module
Typ.
--
--
--
--
--
270
Max.
1.0
2.2
1.0
2.2
2.0
--
Units
°C/W
°C/W
°C/W
°C/W
°C/W
g
©2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A