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FMC6G30US60 Datasheet, PDF (2/9 Pages) Fairchild Semiconductor – Compact & Complex Module
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Electrical Characteristics of IGBT @ Inverter TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min. Typ. Max. Units
Off Characteristics
BVCES
∆BVCES/
∆TJ
ICES
IGES
Collector-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
VGE = 0V, IC = 250uA
VGE = 0V, IC = 1mA
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
VCE(sat)
G-E Threshold Voltage
Collector to Emitter Saturation Voltage
IC = 30mA, VCE = VGE
IC = 30A, VGE = 15V
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
td(on)
tr
td(off)
tf
Eon
Eoff
Ets
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Tsc
Short Circuit Withstand Time
Qg
Total Gate Charge
Qge
Gate-Emitter Charge
Qgc
Gate-Collector Charge
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 25°C
VCC = 300 V, IC = 30A,
RG = 7Ω, VGE = 15V,
Inductive Load, TC = 125°C
VCC = 300 V, VGE = 15V
@ TC = 100°C
VCE = 300 V, IC = 30A,
VGE = 15V
600
--
--
V
--
0.6
--
V/°C
--
--
250
uA
--
-- ± 100 nA
5.0
6.0
8.5
V
--
2.2 2.8
V
-- 1970 --
pF
--
310
--
pF
--
74
--
pF
--
30
--
ns
--
65
--
ns
--
54
80
ns
--
138 200
ns
--
0.92
--
mJ
--
0.82
--
mJ
--
1.74 2..4
mJ
--
34
--
ns
--
67
--
ns
--
60
90
ns
--
281 400
ns
--
0.93
--
mJ
--
1.56
--
mJ
--
2.49 3.4
mJ
10
--
--
us
--
85
120
nC
--
17
25
nC
--
39
55
nC
©2000 Fairchild Semiconductor International
FMC6G30US60 Rev. A
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