FGW15N40A Datasheet, PDF (5/6 Pages) Fairchild Semiconductor – Strobe Flash N-Channel Logic Level IGBT

Typical Characteristics (Continued)
6
V_CC = 300V, V_GE = 4V, R_GE = 51Ω, T_J = 25^oC
3
V_CC = 300V, I_CE = 150A, V_GE = 4V, T_J = 25^oC
t_off
t_fall
1
t_on
t_rise
0.1
0
25
50
75
100
125
150
I_CE, COLLECTOR TO EMITTER CURRENT (A)
Figure 13. Switching Time vs Collector Current
8
I_G(REF) = 1mA, V_CC = 300V, R_L = 2Ω, T_J = 25^oC
7
6
5
4
3
2
1
0
0 5 10 15 20 25 30 35 40 45
Q_G, GATE CHARGE (nC)
Figure 15. Gate Charge
t_off
t_fall
1
t_on
t_rise
0.5
0
50
100
150
200
250
300
R_G, GATE RESISTANCE (Ω)
Figure 14. Switching Time vs Gate Resistance
160 _{TJ = 25°C}
PULSE DURATION = 100µs
140
120
100
80
60
40
20
0
1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 16. Collector Current Limit vs Gate to
Emitter Voltage
2.0
DUTY CYCLE - DESCENDING ORDER
1.0 _0.5
0.2
0.1
0.05
0.02
0.1 _0.01
0.01
t₁
P_D
t₂
SINGLE PULSE
DUTY FACTOR, D = t₁ / t₂
PEAK T_J = (P_D X Z_θJA X R_θJA) + T_C
0.001
10^-4
10^-3
10^-2
10^-1
10⁰
10¹
t₁, RECTANGULAR PULSE DURATION (s)
Figure 17. Normalized Transient Thermal Impedance, Junction to Case
FGW15N40A Rev. A2
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