FGW15N40A Datasheet, PDF (1/6 Pages) Fairchild Semiconductor – Strobe Flash N-Channel Logic Level IGBT

FGW15N40A
Strobe Flash N-Channel Logic Level IGBT
August 2005
Features
„ V_CE(SAT) = 4.4V at I_C=150A
„ t_fl = 1.1µs, td_(OFF)I = 0.46µs
„ 2kV ESD Protected
„ High Peak Current Density
„ TSSOP - 8 package, small footprint, low profile
(1mm thick)
Applications
„ Camera Strobe
General Description
This N-Channel IGBT is a MOS gated, logic level device
which has been especially tailored for camera flash applica-
tions where board space is a premium. These devices have
been designed to offer exceptional power dissipation in a
very small footprint for applications where bigger, more ex-
pensive packages are impractical. The gate is ESD protect-
ed with a zener diode.
E
E
E
G
Pin 1
TSSOP-8
C
C
C
C
Internal Diagram
4
3
2
1
5
6
7
8
©2005 Fairchild Semiconductor Corporation
1
FGW15N40A Rev. A2
www.fairchildsemi.com