FGW15N40A Datasheet, PDF (4/6 Pages) Fairchild Semiconductor – Strobe Flash N-Channel Logic Level IGBT

Typical Characteristics (Continued)
7
7
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
T_J = -40^oC
6
6
I_CE = 150A
I_CE = 120A
5
I_CE = 90A
5
I_CE = 60A
4
4
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
T_J = 25^oC
I_CE = 150A
I_CE = 120A
I_CE = 90A
I_CE = 60A
3
3
2
0.5
1
1.5
2
2.5
3
3.5
4
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 7. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
2
0.5 1 1.5 2 2.5 3 3.5 4 4.5 5
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 8. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
9
9
DUTY CYCLE < 0.5%
DUTY CYCLE < 0.5%
PULSE DURATION = 250µs
PULSE DURATION = 250µs
8
T_J = 70^oC
8
T_J = 125^oC
7
I_CE = 150A
7
I_CE = 150A
I_CE = 120A
I_CE = 120A
6
I_CE = 90A
6
I_CE = 90A
I_CE = 60A
I_CE = 60A
5
5
4
4
3
3
2
0
1
2
3
4
5
6
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 9. Collector to Emitter On-State Voltage vs
Gate to Emitter Voltage
2
0
1
2
3
4
5
6
7
V_GE, GATE TO EMITTER VOLTAGE (V)
Figure 10. Collector to Emitter On-State Voltage
vs Gate to Emitter Voltage
0.75
0.7
0.65
I_CE = 1mA
V_CE = V_GE
5000
FREQUENCY = 1MHz
1000
C_IES
0.6
0.55
0.5
C_OES
100
C_RES
0.45
0.4
-40 -20 0 20 40 60 80 100 120 140
T_C, CASE TEMPERATURE (°C)
Figure 11. Gate to Emitter Threshold Voltage vs
Case Temperature
10
4
0.1
1
10
100
V_CE, COLLECTOR TO EMITTER VOLTAGE (V)
Figure 12. Capacitance vs Collector to Emitter
Voltage
FGW15N40A Rev. A2
4
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