FGPF90N30 Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 300V, 90A PDP IGBT

Typical Performance Characteristics (Continued)
Figure 13. Turn-On Characteristics vs.
Collector Current
1000
Figure 14. Turn-Off Characteristics
vs. Collector Current
500
100
t_r
t_d(on)
100
t_d(off)
t_f
10
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
1
10 20 30 40 50 60 70 80 90
Collector Current, I_C [A]
Figure 15. Switching Loss vs Gate Resistance
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
10
10 20 30 40 50 60 70 80 90
Collector Current, I_C [A]
Figure 16. Switching Loss vs
Collector Current
1500
1000
2000
E_off
1000
E_off
100
0
Common Emitter
E_on
V_CC = 600V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
10 20 30 40 50 60 70 80 90 100
Gate Resistance, R_G [Ω]
E_on
100
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
10
10 20 30 40 50 60 70 80 90
Collector Current, I_C [A]
Figure 17. Transient Thermal Impedance of IGBT
10
1
0 .1
0 .0 1
0 .5
0 .2
0 .1
0 .0 5
0 .0 2
0 .0 1
s in g le p u ls e
1E -3
1 E -5
1 E -4
1E -3
0 .0 1
0 .1
R e c ta n g u la r P u ls e D u ra tio n [s e c ]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + T_C
1
10
5
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FGPF90N30 Rev. A