FGPF90N30 Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 300V, 90A PDP IGBT

Package Marking and Ordering Information
Device Marking
FGPF90N30
Device
FGFP90N30TU
Package
TO-220F
Packaging
Type
Rail / Tube
Electrical Characteristics T_C = 25^oC unless otherwise noted
Symbol
Parameter
Test Conditions
Off Characteristics
BV_CES
Collector-Emitter Breakdown Voltage
∆B_VCES
∆T_J
I_CES
I_GES
Temperature Coefficient of Breakdown
Voltage
Collector Cut-Off Current
G-E Leakage Current
V_GE = 0V, I_C = 250uA
V_GE = 0V, I_C = 250uA
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
On Characteristics
V_GE(th)
G-E Threshold Voltage
V_CE(sat) Collector to Emitter Saturation Voltage
I_C = 250uA, V_CE = V_GE
I_C =30A, V_GE = 15V
I_C =60A, V_GE = 15V
I_C = 90A, V_GE = 15V
T_C = 25^οC
I_C = 90A, V_GE = 15V
T_C = 125^οC
Dynamic Characteristics
C_ies
C_oes
C_res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
V_CE = 30V_, V_GE = 0V
f = 1MHz
Switching Characteristics
t_d(on)
t_r
t_d(off)
t_f
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_ge
Q_gc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
V_CC = 200 V, I_C = 60A
R_G = 10Ω, V_GE = 15V
Resistive Load, T_C = 25^oC
V_CC = 200 V, I_C = 60A
R_G = 10Ω, V_GE = 15V
Resistive Load, T_C = 125^οC
V_CE = 200 V, I_C = 60A
V_GE = 15V
Qty per Tube
50ea
Max Qty
per Box
-
Min. Typ. Max. Units
300
--
--
V
--
0.6
--
V/^oC
--
--
100
uA
--
--
± 250
nA
2.5
4.0
5.0
V
--
1.25 1.55
V
--
1.5
--
V
--
1.9
--
V
--
2.0
--
V
--
1690
--
pF
--
240
--
pF
--
80
--
pF
--
22
--
ns
--
106
--
ns
--
86
--
ns
--
130
300
ns
--
22
--
ns
--
119
--
ns
--
91
--
ns
--
210
--
ns
--
93
--
nC
--
45
--
nC
--
14
--
nC
2
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FGPF90N30 Rev. A