FGPF90N30 Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 300V, 90A PDP IGBT

Typical Performance Characteristics (Continued)
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
90A
Figure 8. Capacitance Characteristics
4000
3000
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
2000
C_ies
60A
4
I_C = 30A
0
0
4
8
12
16
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate Charge Characteristics
15
14 ^{Common Emitter}
R_L = 3.3Ω
12 ^TC ^{= 25oC}
10
V_cc = 100V
8
200V
6
4
2
0
0
20
40
60
80
Gate Charge, Q_g [nC]
Figure 11. Turn-On Characteristics vs
Gate Resistance
500
1000
C_oss
C_res
20
00
5
10
15
20
25
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
300
100
50us
100us
1ms
10
DC Operation
1
Single Nonrepetitive
0.1 ^{Pulse Tc=25oC}
Curves must be derated
linearly with increase
in temperature
0.01
100
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
Figure 12. Turn Off Characteristics vs.
Gate Resistance
1000
1000
t_r
100
10
0
td(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
100
10
0
t_f
t_d(off)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 60A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
4
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FGPF90N30 Rev. A