FGPF30N45T Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – 450V, 30A PDP Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
V_GE = 15V, R_G = 15Ω
100 ^{TC = 25oC}
T_C = 125^oC
t_r
t_d(on)
10
5
10
15
20
25
30
Collector Current, I_C [A]
Figure 15. Switching Loss vs. Gate Resistance
1000
Figure 14. Turn-off Characteristics vs.
Collector Current
500
100
t_f
t_d(off)
10
5
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
10
15
20
25
30
Collector Current, I_C [A]
Figure 16. Switching Loss vs.Gate Resistance
1000
E_off
100
10
0
E_on
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 17. Transient Thermal Impedance of IGBT
E_off
100
E_on
10
1
5
Common Emitter
V_GE = 15V, R_G = 15Ω
T_C = 25^oC
T_C = 125^oC
10
20
30
Collector Current, I_C [A]
10
0.5
1
0.2
0.1
0.05
0.1 _0.02
0.01
0.01
single pulse
1E-3
1E-5
1E-4
P_DM
t₁
Duty Facto^t2r, D = t1/t2
Peak T_j = Pdm x Zthjc + T_C
1E-3
0.01
0.1
1
Rectangular Pulse Duration [sec]
10
100
FGPF30N45T Rev. A
5
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