FGPF30N45T Datasheet, PDF (4/7 Pages) Fairchild Semiconductor – 450V, 30A PDP Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
4
20A
30A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
V_CC = 100V
200V
9
6
3
0
0
20
40
60
80
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100
10
1
0
t_r
t_d(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
10000
1000
C_ies
C_oes
C_res
100
Common Emitter
V_GE = 0V, f = 1MHz
T_C = 25^oC
10
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
500
I_C MAX (Pulse)
100
10µs
10
1 ^IC ^{MAX (Continuous)}
100µs
1ms
10 ms
Single Nonrepetitive
0.1 ^{Pulse TC = 25oC}
Curves must be derated
linearly with increase
in temperature
0.01
1
10
DC Operation
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
1000
t_f
100
t_d(off)
10
0
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 30A
T_C = 25^oC
T_C = 125^oC
10
20
30
40
50
Gate Resistance, R_G [Ω]
FGPF30N45T Rev. A
4
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