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FGPF30N45T Datasheet, PDF (2/7 Pages) Fairchild Semiconductor – 450V, 30A PDP Trench IGBT
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Package Marking and Ordering Information
Device Marking
Device
FGPF30N45T
FGFP30N45TTU
Package
TO-220F
Packaging
Type
Rail / Tube
Qty per Tube
50ea
Max Qty
per Box
-
Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ. Max. Units
Off Characteristics
BVCES
∆BVCES
∆TJ
ICES
IGES
Collector to Emitter Breakdown Voltage VGE = 0V, IC = 250µA
Temperature Coefficient of Breakdown
Voltage
VGE = 0V, IC = 250µA
Collector Cut-Off Current
G-E Leakage Current
VCE = VCES, VGE = 0V
VGE = VGES, VCE = 0V
On Characteristics
VGE(th)
G-E Threshold Voltage
VCE(sat) Collector to Emitter Saturation Voltage
IC = 250µA, VCE = VGE
IC = 20A, VGE = 15V
IC = 30A, VGE = 15V
IC = 30A, VGE = 15V,
TC = 125oC
Dynamic Characteristics
Cies
Coes
Cres
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VCE = 30V, VGE = 0V,
f = 1MHz
Switching Characteristics
td(on)
tr
td(off)
tf
td(on)
tr
td(off)
tf
Qg
Qge
Qgc
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate to Emitter Charge
Gate to Collector Charge
VCC = 200V, IC = 30A,
RG = 15Ω, VGE = 15V,
Resistive Load, TC = 25oC
VCC = 200V, IC = 30A,
RG = 15Ω, VGE = 15V,
Resistive Load, TC = 125oC
VCE = 200V, IC = 30A,
VGE = 15V
450
-
-
V
-
0.5
-
V/oC
-
-
100
µA
-
-
±400
nA
3.0
4.5
5.5
V
-
1.35
1.6
-
1.55
-
V
-
1.53
-
V
-
1610
-
pF
-
88
-
pF
-
68
-
pF
-
19
-
ns
-
57
-
ns
-
119
-
ns
-
220
330
ns
-
20
-
ns
-
60
-
ns
-
122
-
ns
-
265
-
ns
-
73
-
nC
-
11
-
nC
-
33
-
nC
FGPF30N45T Rev. A
2
www.fairchildsemi.com
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