FGL60N100BNTD Datasheet, PDF (5/7 Pages) Fairchild Semiconductor – NPT-Trench IGBT

100
T = 100 ℃
C
10
T = 25 ℃
C
1
0.1
0.0
0.5
1.0
1.5
2.0
2.5
Forward Voltage, V [V]
FM
Fig 13. Forward Characteristics
1.2
120
I =60A
F
T =25℃
C
1.0
100
0.8
80
t
rr
0.6
60
0.4
40
0.2
0.0
0
I
20
rr
0
40
80
120 160 200 240
di/dt [A/㎲ ]
Fig 14. Reverse Recovery Characteristics
vs. di/dt
di/dt=-20A/㎲
1.2
T =25℃
12
C
1.0
10
t
rr
0.8
8
I
rr
0.6
6
0.4
4
10
20
30
40
50
60
Forward Current, I [A]
F
Fig 15. Reverse Recovery Characteristics vs.
Forward Current
250
T = 25 ℃
C
200
150
100
50
0
0.1
1
10
100
Reverse Voltage, V [V]
R
Fig 17. Junction capacitance
1000
100
T_C = 150℃
10
1
0.1
0.01
T_C= 25℃
1E-3
0
300
600
900
Reverse Voltage, V_R [V]
Fig 16. Reverse Current vs. Reverse Voltage
©2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A