FGL60N100BNTD Datasheet, PDF (3/7 Pages) Fairchild Semiconductor – NPT-Trench IGBT

100
Common Emitter
20V
T = 25℃
15V
C
8V
10V
80
9V
60
40
20
0
0
7V
V = 6V
GE
1
2
3
4
5
Collector-Emitter Voltage, V [V]
CE
Fig 1. Typical Output Characteristics
90
Common Emitter
80
V = 15V
GE
T = 25℃ ━━
C
70
T = 125℃ ------
C
T = 25℃
C
60
T = 125℃
C
50
40
30
20
10
0
0
1
2
3
4
Collector-Emitter Voltage, V [V]
CE
Fig 2. Typical Saturation Voltage Characteristics
Common Emitter
V =15V
GE
3
80A
60A
2
30A
I =10A
C
1
-50
0
50
100
150
Case Temperature, T [℃]
C
Fig 3. Saturation Voltage vs. Case
Temperature at Varient Current Level
10
Common Emitter
T = 25℃
C
8
6
30A
4
60A
80A
2
I = 10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Fig 5. Saturation Voltage vs. V_GE
©2004 Fairchild Semiconductor Corporation
10
Common Emitter
T = - 40 ^OC
C
8
6
30A
4
60A
80A
2
I =10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Fig 4. Saturation Voltage vs. V_GE
10
Common Emitter
T = 125℃
C
8
30A
6
60A
80A
4
2
I = 10A
C
0
4
8
12
16
20
Gate-Emitter Voltage, V [V]
GE
Fig 6. Saturation Voltage vs. V_GE
FGL60N100BNTD Rev. A