FGL60N100BNTD Datasheet, PDF (1/7 Pages) Fairchild Semiconductor – NPT-Trench IGBT

FGL60N100BNTD
NPT-Trench IGBT
IGBT
General Description
Trench insulated gate bipolar transistors (IGBTs) with NPT
technology show outstanding performance in conduction
and switching characteristics as well as enhanced
avalanche ruggedness. These devices are well suited for
Induction Heating ( I-H ) applications
Features
• High Speed Switching
• Low Saturation Voltage : V_CE(sat) = 2.5 V @ I_C = 60A
• High Input Impedance
• Built-in Fast Recovery Diode
Application
Micro- Wave Oven, I-H Cooker, I-H Jar, Induction Heater, Home Appliance
C
GC E
TO-264
Absolute Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
I_F
P_D
T_J
T_stg
T_L
Description
Collector-Emitter Voltage
Gate-Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
@ T_C = 25°C
@ T_C = 100°C
Diode Continuous Forward Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 100°C
@ T_C = 25°C
@ T_C = 100°C
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJC(DIODE)
R_θJA
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
E
FGL60N100BNTD
1000
± 25
60
42
120
15
180
72
-55 to +150
-55 to +150
300
Typ.
--
--
--
Max.
0.69
2.08
25
Units
V
V
A
A
A
A
W
W
°C
°C
°C
Units
°C/W
°C/W
°C/W
©2004 Fairchild Semiconductor Corporation
FGL60N100BNTD Rev. A