FGB20N60SF Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 600V, 20A Field Stop IGBT

Typical Performance Characteristics
Figure 13. Turn-off Characteristics vs.
Gate Resistance
1000
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
T_C = 25^oC
T_C = 125^oC
t_d(off)
100
t_f
10
0
10 20 30 40 50 60
Gate Resistance, R_G [Ω]
Figure 15. Turn-off Characteristics vs.
Collector Current
300
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
100
t_d(off)
Figure 14. Turn-on Characteristics vs.
Collector Current
200
Common Emitter
V_GE = 15V, R_G = 10Ω
100 _{TC = 25}o_C
T_C = 125^oC
t_r
10
t_d(on)
3
0
10
20
30
40
Collector Current, I_C [A]
Figure 16. Switching Loss vs.
Gate Resistance
3
Common Emitter
V_CC = 400V, V_GE = 15V
I_C = 20A
1
T_C = 25^oC
T_C = 125^oC
E_on
t_f
10
0
10
20
30
40
Collector Current, I_C [A]
Figure 17. Switching Loss vs.
Collector Current
10
Common Emitter
V_GE = 15V, R_G = 10Ω
T_C = 25^oC
T_C = 125^oC
E_on
1
E_off
0.1
0.02
0
10
20
30
40
Collector Current, I_C [A]
E_off
0.1
0
10 20 30 40 50 60
Gate Resistance, R_G [Ω]
Figure 18. Turn off Switching
SOA Characteristics
80
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
FGB20N60SF Rev. A
5
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