FGB20N60SF Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 600V, 20A Field Stop IGBT

FGB20N60SF
600V, 20A Field Stop IGBT
Features
• High Current Capability
• Low Saturation Voltage: V_CE(sat) =2.2V @ I_C = 20A
• High Input Impedance
• Fast Switching
• RoHS Compliant
Applications
• Welder, UPS, SMPS, PFC
October 2010
General Description
Using Novel Field Stop IGBT Technology, Fairchild’s new series
of Field Stop IGBTs offer the optimum performance for Welder,
UPS, SMPS and PFC applications where low conduction and
switching losses are essential.
COLLECTOR
(FLANGE)
GC E
TO-263AB/D²-PAK
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{CM (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
Collector Current
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 100^oC
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol
Parameter
R_θJC
R_θJA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient (PCB Mount)(2)
Notes:
2: Mounted on 1” square PCB(FR4 or G-10 material)
C
G
E
Ratings
600
± 20
40
20
60
208
83
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.6
40
Units
V
V
A
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FGB20N60SF Rev. A
www.fairchildsemi.com