FGB20N60SF Datasheet, PDF (3/8 Pages) Fairchild Semiconductor – 600V, 20A Field Stop IGBT

Typical Performance Characteristics
Figure 1. Typical Output Characteristics
60
T_C = 25^oC
20V
15V
12V
10V
40
Figure 2. Typical Output Characteristics
60
T_C = 125^oC
20V
12V
15V
10V
40
20
V_GE = 8V
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 3. Typical Saturation Voltage
Characteristics
60
Common Emitter
V_GE = 15V
T_C = 25^oC
40 ^{TC = 125oC}
20
V_GE = 8V
0
0.0
1.5
3.0
4.5
6.0
Collector-Emitter Voltage, V_CE [V]
Figure 4. Transfer Characteristics
60
Common Emitter
V_CE = 20V
T_C = 25^oC
T_C = 125^oC
40
20
20
0
0
1
2
3
4
5
Collector-Emitter Voltage, V_CE [V]
Figure 5. Saturation Voltage vs. Case
Temperature at Variant Current Level
4
Common Emitter
V_GE = 15V
40A
3
20A
2
I_C = 10A
1
25
50
75
100
125
Collector-Emitter Case Temperature, T_C [^oC]
0
4
6
8
10
12
Gate-Emitter Voltage,V_GE [V]
Figure 6. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = -40^oC
16
12
8
40A
4
20A
I_C = 10A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
FGB20N60SF Rev. A
3
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