FGA180N33AT Datasheet, PDF (5/8 Pages) Fairchild Semiconductor – 330V, 180A PDP Trench IGBT

Typical Performance Characteristics
Figure 13. Turn-on Characteristics vs.
Collector Current
2000
1000
Common Emitter
V_GE = 15V, R_G = 5Ω
T_C = 25^oC
T_C = 125^oC
t_r
t_d(on)
100
10 30
60
90 120 150 180
Collector Current, I_C [A]
Figure 14. Turn-off Characteristics vs.
Collector Current
1000
100
t_f
t_d(off)
Common Emitter
V_GE = 15V, R_G = 5Ω
T_C = 25^oC
T_C = 125^oC
1
10 30
60
90 120 150 180
Collector Current, I_C [A]
Figure 15. Turn off Switching SOA Characteristics
500
100
10
Safe Operating Area
V_GE = 15V, T_C = 125^oC
1
1
10
100
400
Collector-Emitter Voltage, V_CE [V]
FGA180N33AT Rev. A
5
www.fairchildsemi.com