FGA180N33AT Datasheet, PDF (4/8 Pages) Fairchild Semiconductor – 330V, 180A PDP Trench IGBT

Typical Performance Characteristics
Figure 7. Saturation Voltage vs. V_GE
20
Common Emitter
T_C = 125^oC
16
12
8
40A
4
180A
90A
I_C = 20A
0
0
4
8
12
16
20
Gate-Emitter Voltage, V_GE [V]
Figure 9. Gate charge Characteristics
15
Common Emitter
T_C = 25^oC
12
9
V_CC = 100V
200V
6
3
0
0
30 60 90 120 150 180
Gate Charge, Q_g [nC]
Figure 11. Turn-on Characteristics vs.
Gate Resistance
500
100
t_r
10
0
t_d(on)
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
20
40
60
80
100
Gate Resistance, R_G [Ω]
Figure 8. Capacitance Characteristics
6000
Common Emitter
V_GE = 0V, f = 1MHz
C_ies
T_C = 25^oC
4000
2000
C_oes
C_res
0
1
10
30
Collector-Emitter Voltage, V_CE [V]
Figure 10. SOA Characteristics
1000
I_C MAX (Pulse)
100
10 I_C MAX (Continuous)
10µs
100µs
1ms
10ms
DC Operation
1 ^*Notes:
1. T_C = 25^oC
2. T_J = 150^oC
3. Single Pulse
0.1
1
10
100
Collector-Emitter Voltage, V_CE [V]
1000
Figure 12. Turn-off Characteristics vs.
Gate Resistance
5000
Common Emitter
V_CC = 200V, V_GE = 15V
I_C = 40A
T_C = 25^oC
T_C = 125^oC
1000
t_d(off)
t_f
100
70
0
20
40
60
80
100
Gate Resistance, R_G [Ω]
FGA180N33AT Rev. A
4
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