FGA180N33AT Datasheet, PDF (1/8 Pages) Fairchild Semiconductor – 330V, 180A PDP Trench IGBT

FGA180N33AT
330V, 180A PDP Trench IGBT
Features
• High Current Capability
• Low saturation voltage: V_CE(sat) =1.03V @ I_C = 40A
• High input impedance
• RoHS compliant
Applications
PDP SYSTEM
April 2008
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of
trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
C
G CE
TO-3P
Absolute Maximum Ratings
Symbol
V_CES
V_GES
I_C
I_{C pulse (1)}
P_D
T_J
T_stg
T_L
Description
Collector to Emitter Voltage
Gate to Emitter Voltage
Collector Current
@ T_C = 25^oC
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
@ T_C = 25^oC
@ T_C = 25^oC
@ T_C = 100^oC
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
Notes:
1: Repetitive test, pulse width = 100usec, Duty = 0.1
* I_{C_}pulse limited by max Tj
Thermal Characteristics
Symbol
R_θJC(IGBT)
R_θJA
Parameter
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
G
E
Ratings
330
± 30
180
450
390
156
-55 to +150
-55 to +150
300
Typ.
-
-
Max.
0.32
40
Units
V
V
A
A
W
W
o_C
o_C
o_C
Units
o_C/W
o_C/W
©2008 Fairchild Semiconductor Corporation
1
FGA180N33AT Rev. A
www.fairchildsemi.com