FDS2582 Datasheet, PDF (5/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 150V, 4.1A, 66mΩ

Typical Characteristics T_A = 25°C unless otherwise noted
1.2
1.2
V_GS = V_DS, I_D = 250µA
I_D = 250µA
1.0
1.1
0.8
1.0
0.6
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
0.9
-80
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
3000
C_ISS = C_GS + C_GD
1000
C_OSS ≅ C_DS + C_GD
C_RSS = C_GD
100
10
V_DD = 75V
8
6
4
V_GS = 0V, f = 1MHz
10
0.1
1
10
150
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
I_D = 4.1A
I_D = 2A
5
10
15
20
Q_g, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B