FDS2582 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 150V, 4.1A, 66mΩ

September 2002
FDS2582
N-Channel PowerTrench^® MOSFET
150V, 4.1A, 66mΩ
Features
• r_DS(ON) = 57mΩ (Typ.), V_GS = 10V, I_D = 4.1A
• Q_g(tot) = 19nC (Typ.), V_GS = 10V
• Low Miller Charge
• Low Q_RR Body Diode
• Optimized efficiency at high frequencies
• UIS Capability (Single Pulse and Repetitive Pulse)
Formerly developmental type 82855
Applications
• DC/DC converters and Off-Line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 24V and 48V Systems
• High Voltage Synchronous Rectifier
• Direct Injection / Diesel Injection Systems
• 42V Automotive Load Control
• Electronic Valve Train Systems
Branding Dash
5
1
2
3
4
SO-8
MOSFET Maximum Ratings T_A = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_A = 25^oC, V_GS = 10V, R_θJA = 50^oC/W)
Continuous (T_A = 100^oC, V_GS = 10V, R_θJA = 50^oC/W)
Pulsed
E_AS
Single Pulse Avalanche Energy (Note 1)
Power dissipation
P_D
Derate above 25^oC
T_J, T_STG Operating and Storage Temperature
Thermal Characteristics
R_θJA
R_θJA
R_θJC
Thermal Resistance, Junction to Ambient at 10 seconds (Note 3)
Thermal Resistance, Junction to Ambient at 1000 seconds (Note 3)
Thermal Resistance, Junction to Case (Note 2)
Package Marking and Ordering Information
Device Marking
FDS2582
Device
FDS2582
Package
SO-8
Reel Size
330mm
5
4
6
3
7
2
8
1
Ratings
150
±20
4.1
2.6
Figure 4
252
2.5
20
-55 to 150
Units
V
V
A
A
A
mJ
W
mW/^oC
o_C
50
o_C/W
80
o_C/W
25
o_C/W
Tape Width
12mm
Quantity
2500 units
©2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B