FDS2582 Datasheet, PDF (4/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 150V, 4.1A, 66mΩ

Typical Characteristics T_A = 25°C unless otherwise noted
100
10µs
10
100µs
1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
0.1
1ms
10ms
100ms
SINGLE PULSE
T_J = MAX RATED
T_C = 25^oC
1s
0.01
0.1
1
10
100
400
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
7
STARTING T_J = 25^oC
1
STARTING T_J = 150^oC
If R = 0
tAV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
t_AV = (L/R)ln[(I_AS*R)/(1.3*RATED BV_DSS - V_DD) +1]
0.1
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
30
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
25 ^VDD ^{= 15V}
20
T_J = 150^oC
15
T_J = 25^oC
10
5
T_J = -55^oC
0
3.5
4.0
4.5
5.0
5.5
6.0
V_GS, GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
30
T_A = 25^oC
25
V_GS = 10V
20
V_GS = 7V
V_GS = 6V
15
10
V_GS = 5V
5
0
0
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
0.5
1.0
1.5
2.0
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
66
V_GS = 6V
64
62
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
60
58
V_GS = 10V
56
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
I_D, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
1.0
0.5
-80
V_GS = 10V, I_D = 4.1A
-40
0
40
80
120
160
T_J, JUNCTION TEMPERATURE (^oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2002 Fairchild Semiconductor Corporation
FDS2582 Rev. B