FDP14AN06LA0 Datasheet, PDF (5/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 60V, 60A, 14.6mΩ

Typical Characteristics T_C = 25°C unless otherwise noted
1.4
V_GS = V_DS, I_D = 250µA
1.2
1.0
0.8
0.6
0.4
0.2
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 11. Normalized Gate Threshold Voltage vs
Junction Temperature
1.2
I_D = 250µA
1.1
1.0
0.9
-80
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 12. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
5000
1000
C_RSS = C_GD
C_ISS = C_GS + C_GD
C_OSS ≅ C_DS + C_GD
10
V_DD = 30V
8
6
4
100
V_GS = 0V, f = 1MHz
50
0.1
1
10
60
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 13. Capacitance vs Drain to Source
Voltage
2
0
0
WAVEFORMS IN
DESCENDING ORDER:
I_D = 60A
I_D = 10A
10
20
30
40
50
Q_g, GATE CHARGE (nC)
Figure 14. Gate Charge Waveforms for Constant
Gate Currents
©2004 Fairchild Semiconductor Corporation
FDB14AN06LA0 / FDP14AN06LA0 Rev. B