FDP14AN06LA0 Datasheet, PDF (1/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 60V, 60A, 14.6mΩ

January 2004
FDB14AN06LA0 / FDP14AN06LA0
N-Channel PowerTrench^® MOSFET
60V, 60A, 14.6mΩ
Features
• r_DS(ON) = 12.8mΩ (Typ.), V_GS = 5V, I_D = 60A
• Q_g(tot) = 24nC (Typ.), V_GS = 5V
• Low Miller Charge
• Low Q_RR Body Diode
• UIS Capability (Single Pulse and Repetitive Pulse)
• Qualified to AEC Q101
Formerly developmental type 83557
Applications
• Motor / Body Load Control
• ABS Systems
• Powertrain Management
• Injection Systems
• DC-DC converters and Off-line UPS
• Distributed Power Architectures and VRMs
• Primary Switch for 12V and 24V systems
DRAIN
(FLANGE)
TO-220AB
FDP SERIES
SOURCE
DRAIN
GATE
GATE
SOURCE
TO-263AB
FDB SERIES
DRAIN
(FLANGE)
MOSFET Maximum Ratings T_C = 25°C unless otherwise noted
Symbol
V_DSS
V_GS
I_D
E_AS
P_D
T_J, T_STG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current
Continuous (T_C = 25^oC, V_GS = 10V)
Continuous (T_C = 25^oC, V_GS = 5V)
Continuous (T_A = 25^oC, V_GS = 5V, R_θJA = 43^oC/W)
Pulsed
Single Pulse Avalanche Energy (Note 1)
Power dissipation
Derate above 25^oC
Operating and Storage Temperature
Thermal Characteristics
R_θJC
R_θJA
R_θJA
Thermal Resistance Junction to Case TO-220,TO-263
Thermal Resistance Junction to Ambient TO-220,TO-263 (Note 2)
Thermal Resistance Junction to Ambient TO-263, 1in² copper pad area
D
G
S
Ratings
60
±20
67
60
10
Figure 4
46
125
0.83
-55 to 175
1.2
62
43
Units
V
V
A
A
A
A
mJ
W
W/^oC
o_C
o_C/W
o_C/W
o_C/W
This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a
copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/
Reliability data can be found at: http://www.fairchildsemi.com/products/discrete/reliability/index.html.
All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems
certification.
©2004 Fairchild Semiconductor Corporation
FDB14AN06LA0 / FDP14AN06LA0 Rev. B