FDP14AN06LA0 Datasheet, PDF (4/11 Pages) Fairchild Semiconductor – N-Channel PowerTrench MOSFET 60V, 60A, 14.6mΩ

Typical Characteristics T_C = 25°C unless otherwise noted
1000
100
10µs
100µs
10
OPERATION IN THIS
AREA MAY BE
LIMITED BY r_DS(ON)
1ms
10ms
DC
1
SINGLE PULSE
T_J = MAX RATED
T_C = 25^oC
0.1
1
10
100
V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 5. Forward Bias Safe Operating Area
500
If R = 0
tAV = (L)(I_AS)/(1.3*RATED BV_DSS - V_DD)
If R ≠ 0
100 ^{tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1]}
STARTING T_J = 25^oC
10
STARTING T_J = 150^oC
1
0.001
0.01
0.1
1
10
100
t_AV, TIME IN AVALANCHE (ms)
NOTE: Refer to Fairchild Application Notes AN7514 and AN7515
Figure 6. Unclamped Inductive Switching
Capability
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
125 V_DD = 15V
100
75
T_J = 25^oC
50
T_J = 175^oC
25
T_J = -55^oC
0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
V_GS , GATE TO SOURCE VOLTAGE (V)
Figure 7. Transfer Characteristics
150
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
125 _{TC = 25}o_C
V_GS = 10V
100
75
V_GS = 5V
V_GS = 4V
50
25
0
0
V_GS = 3V
0.5
1.0
1.5
2.0
2.5
V_DS , DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Saturation Characteristics
13
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
12
V_GS = 5V
11
2.5
PULSE DURATION = 80µs
DUTY CYCLE = 0.5% MAX
2.0
1.5
10
V_GS = 10V
9
0
20
40
60
80
I_D, DRAIN CURRENT (A)
Figure 9. Drain to Source On Resistance vs Drain
Current
1.0
0.5
-80
V_GS = 5V, I_D = 60A
-40
0
40
80
120 160 200
T_J, JUNCTION TEMPERATURE (^oC)
Figure 10. Normalized Drain to Source On
Resistance vs Junction Temperature
©2004 Fairchild Semiconductor Corporation
FDB14AN06LA0 / FDP14AN06LA0 Rev. B