FAN5109 Datasheet, PDF (5/13 Pages) Fairchild Semiconductor – Dual Bootstrapped 12V MOSFET Driver

Electrical Specifications
V_CC = 12V, and T_A = 25°C using the circuit in Figure 4 unless otherwise noted. The • denotes specifications which
apply over the full operating temperature range.
Parameter
Input Supply
VCC Voltage Range
VCC Current
OD Input
Input High Voltage
Input Low Voltage
Input Hysteresis
Input Current
Propagation Delay²
PWM Input
Input High Voltage
Input Low Voltage
Input Current
High-Side Driver
Output Resistance, Sourcing
Source Current²
Output Resistance, Sinking
Sink Current²
Transition Times^2,4
Propagation Delay^2,3
Low-Side Driver
Output Resistance, Sourcing
Source Current²
Output Resistance, Sinking
Sink Current²
Transition Times^2,4
Propagation Delay^2,3
Symbol
Conditions
Min.
V_CC
I_CC
OD = 0V
• 6.4
•
V_{IH (OD)}
V_{IL (OD)}
I_OD
t_pdl(OD)
t_pdh(OD)
OD = 3.0V
See Figure 5
• 2.5
•
•
• –300
V_IH(PWM)
V_IL(PWM)
I_IL(PWM)
• 3.5
•
• -1
R_HUP
R_HDN
t_R(HDRV)
t_F(HDRV)
t_pdh(HDRV)
t_pdl(HDRV)
V_BOOT – V_SW = 12V
V_DS = -10V
V_BOOT – V_SW = 12V
V_DS = 10V
Figure 4
See Figure 6
R_LUP
R_LDN
t_R(LDRV)
t_F(LDRV)
t_pdh(LDRV)
t_pdl(LDRV)
t_pdh(LDF)
V_DS = -10V
V_DS = 10V
Figure 4
See Figure 6
See Adaptive Gate
Drive Circuit
description (page 10)
Typ.
12
2.5
550
25
15
2.5
2.0
1.1
3.0
25
15
40
25
2.0
2.7
0.9
3.5
20
15
20
15
160
Max. Unit
13.5
V
4
mA
V
0.8
V
mV
+300
nA
40
ns
30
ns
V
0.8
V
+1
µA
3.3
Ω
A
1.5
Ω
A
40
ns
25
ns
55
ns
40
ns
2.6
Ω
A
1.2
Ω
A
30
ns
25
ns
30
ns
25
ns
ns
Notes:
1. All limits at operating temperature extremes are guaranteed by design, characterization and statistical quality control.
2. Specifications guaranteed by design/characterization (not production tested).
3. For propagation delays, “tpdh” refers to low-to-high signal transition and “tpdl” refers to high-to-low signal transition.
4. Transition times are defined for 10% and 90% of DC values.
5
FAN5109 Rev. 1.0.4
www.fairchildsemi.com