2N5551YBU Datasheet, PDF (5/9 Pages) Fairchild Semiconductor – NPN General-Purpose Amplifier

Typical Performance Characteristics (Continued)
Between Emitter-Base
260
I _C = 1.0 mA
240
220
200
180
160
0.1
1
10
100
1000
RESISTANCE (kΩ)
Figure 7. Collector- Emitter Breakdown Voltage
with Resistance between Emitter-Base
700
600
500
400 ^SOT-23
300
200
100
0
0
25
TO-92
50
75
100
125
150
TEMPERATURE (^oC)
Figure 9. Power Dissipation vs. Ambient
Temperature
vs Collector Current
16
FREG = 20 MHz
V _CE = 10V
12
8
4
0
1
10
50
I _C - COLLECTOR CURRENT (mA)
Figure 8. Small Signal Current Gain vs. Collector
Current
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
5
www.fairchildsemi.com