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| 2N5551YBU Datasheet, PDF (3/9 Pages) Fairchild Semiconductor – NPN General-Purpose Amplifier | |||
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Electrical Characteristics(4)
Values are at TA = 25°C unless otherwise noted.
Symbol
Parameter
Test Condition
Min. Max. Units
Off Characteristics
V(BR)CEO
V(BR)CBO
V(BR)EBO
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
ICBO Collector Cut-Off Current
IEBO Emitter Cut-Off Current
On Characteristics
IC = 1.0 mA, IB = 0
IC = 100 μA, IE = 0
IE = 10 μA, IC = 0
VCB = 120 V, IE = 0
VCB = 120 V, IE = 0, TA = 100°C
VEB = 4.0 V, IC = 0
160
V
180
V
6.0
V
50
nA
50
μA
50
nA
hFE DC Current Gain
VCE(sat) Collector-Emitter Saturation Voltage
VBE(sat) Base-Emitter On Voltage
Small-Signal Characteristics
IC = 1.0 mA, VCE = 5.0 V
IC = 10 mA, VCE = 5.0 V
IC = 50 mA, VCE = 5.0 V
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
IC = 10 mA, IB = 1.0 mA
IC = 50 mA, IB = 5.0 mA
80
80
250
30
0.15
V
0.20
V
1.0
V
1.0
V
fT
Current Gain Bandwidth Product
IC = 10 mA, VCE = 10 V,
f = 100 MHz
100
MHz
Cobo Output Capacitance
VCB = 10 V, IE = 0, f = 1.0 MHz
6.0
pF
Cibo Input Capacitance
VBE = 0.5 V, IC = 0, f = 1.0 MHz
20
pF
Hfe Small-Signal Current Gain
IC = 1.0 mA, VCE = 10 V, f = 1.0 kHz 50
250
NF Noise Figure
IC = 250 μA, VCE= 5.0 V,
RS=1.0 kΩ, f=10 Hz to 15.7 kHz
8.0
dB
Note:
4. PCB board size FR-4 76 x 114 x 0.6 T mm3 (3.0 inch à 4.5 inch à 0.062 inch) with minimum land pattern size.
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
3
www.fairchildsemi.com
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