2N5551YBU Datasheet, PDF (4/9 Pages) Fairchild Semiconductor – NPN General-Purpose Amplifier

Typical Performance Characteristics
250
200
75^oC
150
25^oC
100
-40^oC
50
125^oC
100^oC
V =5V
CE
0
1
10
100
1000
I - COLLECTOR CURRENT [mA]
C
Figure 1. Typical Pulsed Current Gain vs. Collector
Current
1.0
β-40^oC
0.8
25^oC
0.6
125^oC
100^oC
75^oC
0.4
0.2
1
10
100
I - COLLECTOR CURRENT [mA]
C
Figure 3. Base-Emitter Saturation Voltage vs.
Collector Current
50
V_CB = 100V
10 ? 10
1β
0.1
0.01
1
100^oC
125^oC
-40^oC
25^oC
75^oC
10
100
I - COLLECTOR CURRENT [mA]
C
Figure 2. Collector-Emitter Saturation Voltage vs.
Collector Current
1.2
1.0
T = -40oC
A
T = 25oC
A
0.8
0.6
0.4
T = 125^oC
A
0.2
T = 100oC
A
T = 75oC
A
0.0
1
10
100
1000
I - COLLECTOR CURRENT [mA]
C
Figure 4. Base-Emitter On Voltage vs. Collector
Current
100
10
10
C
IB
1
25
50
75
100
125
T_A - AMBIE NT TEMP ERATURE (_°C)
Figure 5. Collector Cut-Off Current vs. Ambient
Temperature
C
OB
1
0 1 2 3 4 5 6 7 8 9 10
Ω
REVERSE BIAS VOLTAGE [V]
Figure 6. Input and Output Capacitance vs. Reverse
Voltage
© 2009 Fairchild Semiconductor Corporation
2N5551 / MMBT5551 Rev. 1.1.0
4
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