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2N3904 Datasheet, PDF (5/7 Pages) NXP Semiconductors – NPN switching transistor
Typical Characteristics (continued)
Storage Time vs Collector Current
500
T J = 25°C
IB1 = IB2 =
Ic
10
100
T J = 125°C
10
5
1
10
100
I C - COLLECTOR CURRENT (mA)
Current Gain
500
VCE = 10 V
f = 1.0 kHz
T A = 25oC
100
NPN General Purpose Amplifier
(continued)
Fall Time vs Collector Current
500
IB1 = IB2=
Ic
10
T J = 125°C
VCC = 40V
100
T J = 25°C
10
5
1
10
100
I C - COLLECTOR CURRENT (mA)
Output Admittance
100
VCE = 10 V
f = 1.0 kHz
T A = 25oC
10
10
0.1
1
10
I C - COLLECTOR CURRENT (mA)
1
0.1
1
10
I C - COLLECTOR CURRENT (mA)
Input Impedance
100
VCE = 10 V
f = 1.0 kHz
T A = 25oC
10
1
0.1
0.1
1
10
I C - COLLECTOR CURRENT (mA)
Voltage Feedback Ratio
10
VCE = 10 V
f = 1.0 kHz
7
T A = 25oC
5
4
3
2
1
0.1
1
10
I C - COLLECTOR CURRENT (mA)