2N3904 Datasheet, PDF (2/7 Pages) NXP Semiconductors – NPN switching transistor

NPN General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T_A = 25°C unless otherwise noted
Test Conditions
Min Max Units
OFF CHARACTERISTICS
V(BR)CEO
Collector-Emitter Breakdown
IC = 1.0 mA, IB = 0
40
Voltage
V(BR)CBO
Collector-Base Breakdown Voltage I_C = 10 µA, I_E = 0
60
V(BR)EBO
Emitter-Base Breakdown Voltage
IE = 10 µA, IC = 0
6.0
IBL
Base Cutoff Current
VCE = 30 V, VEB = 3V
ICEX
Collector Cutoff Current
VCE = 30 V, VEB = 3V
ON CHARACTERISTICS*
h_FE
DC Current Gain
V_CE(sat)
V_BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
I_C = 0.1 mA, V_CE = 1.0 V
I_C = 1.0 mA, V_CE = 1.0 V
I_C = 10 mA, V_CE = 1.0 V
I_C = 50 mA, V_CE = 1.0 V
I_C = 100 mA, V_CE = 1.0 V
I_C = 10 mA, I_B = 1.0 mA
I_C = 50 mA, I_B = 5.0 mA
I_C = 10 mA, I_B = 1.0 mA
I_C = 50 mA, I_B = 5.0 mA
40
70
100
60
30
0.65
SMALL SIGNAL CHARACTERISTICS
fT
Cobo
Cibo
NF
Current Gain - Bandwidth Product
IC = 10 mA, VCE = 20 V,
300
f = 100 MHz
Output Capacitance
VCB = 5.0 V, IE = 0,
f = 1.0 MHz
Input Capacitance
VEB = 0.5 V, IC = 0,
f = 1.0 MHz
Noise Figure
IC = 100 µA, VCE = 5.0 V,
RS =1.0kΩ,f=10 Hz to 15.7kHz
SWITCHING CHARACTERISTICS
t_d
Delay Time
t_r
Rise Time
t_s
Storage Time
t_f
Fall Time
*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
V_CC = 3.0 V, V_BE = 0.5 V,
I_C = 10 mA, I_B1 = 1.0 mA
V_CC = 3.0 V, I_C = 10mA
I_B1 = I_B2 = 1.0 mA
50
50
300
0.2
0.3
0.85
0.95
4.0
8.0
5.0
35
35
200
50
V
V
V
nA
nA
V
V
V
V
MHz
pF
pF
dB
ns
ns
ns
ns
Spice Model
NPN (Is=6.734f Xti=3 Eg=1.11 Vaf=74.03 Bf=416.4 Ne=1.259 Ise=6.734 Ikf=66.78m Xtb=1.5 Br=.7371 Nc=2
Isc=0 Ikr=0 Rc=1 Cjc=3.638p Mjc=.3085 Vjc=.75 Fc=.5 Cje=4.493p Mje=.2593 Vje=.75 Tr=239.5n Tf=301.2p
Itf=.4 Vtf=4 Xtf=2 Rb=10)