2N3904 Datasheet, PDF (1/7 Pages) NXP Semiconductors – NPN switching transistor

2N3904
MMBT3904
PZT3904
C
BE
TO-92
C
SOT-23
Mark: 1A
E
B
C
SOT-223
E
C
B
NPN General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier.
Absolute Maximum Ratings* T_A = 25°C unless otherwise noted
Symbol
Parameter
Value
V_CEO
Collector-Emitter Voltage
40
V_CBO
Collector-Base Voltage
60
V_EBO
Emitter-Base Voltage
6.0
I_C
Collector Current - Continuous
200
T_J, T_stg
Operating and Storage Junction Temperature Range
-55 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics T_A = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
2N3904
625
5.0
83.3
200
Max
*MMBT3904
350
2.8
357
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
**Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm².
**PZT3904
1,000
8.0
125
Units
mW
mW/°C
°C/W
°C/W
 2001 Fairchild Semiconductor Corporation
2N3904/MMBT3904/PZT3904, Rev A