SI6435DQ Datasheet, PDF (4/5 Pages) Fairchild Semiconductor – 30V P-Channel PowerTrench MOSFET

Typical Characteristics
10
I_D = -4.5A
8
6
V_DS = -10V
-15V
-20V
4
2
0
0
4
8
12
16
Q_g, GATE CHARGE (nC)
Figure 7. Gate Charge Characteristics.
100
R_DS(ON) LIMIT
10
1
V_GS = -10V
SINGLE PULSE
0.1
R_θJA = 114^oC/W
T_A = 25^oC
100µs
1ms
10ms
100ms
1s
DC
0.01
0.1
1
10
100
-V_DS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
1200
1000
800
C_ISS
f = 1 MHz
V_GS = 0 V
600
400
C_OSS
200
0
0
C_RSS
5
10
15
20
25
30
-V_DS, DRAIN TO SOURCE VOLTAGE (V)
Figure 8. Capacitance Characteristics.
50
40
30
20
10
0
0.001
0.01
SINGLE PULSE
R_θJA = 114°C/W
T_A = 25°C
0.1
1
10
t₁, TIME (sec)
100
1000
Figure 10. Single Pulse Maximum
Power Dissipation.
1
0.1
0.01
D = 0.5
0.2
0.1
0.05
0.02
0.01
0.001
0.0001
SINGLE PULSE
0.001
0.01
0.1
1
t₁, TIME (sec)
R_θJA(t) = r(t) * R_θJA
R_θJA = 114^oC/W
P(pk)
t₁
t₂
T_J - T_A = P * R_θJA(t)
Duty Cycle, D = t₁ / t₂
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
Si6435DQ Rev B(W)